FDN336P
TYPICAL CHARACTERISTICS (CONTINUED)
700
400
5
4
3
2
1
0
I
D
= −1.3 A
V
= −5 V
DS
C
ISS
−10 V
−15 V
200
100
C
OSS
40
f = 1 MHz
= 0 V
C
RSS
V
GS
0.1
0.2
0.5
1
2
5
10
20
0
1
2
3
4
Q , GATE CHARGE (nC)
g
−V , DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
30
10
50
40
30
20
10
0
SINGLE PULSE
= 270°C/W
T = 25°C
A
R
ꢄ
JA
1 ms
R
LIMIT
DS(ON)
10 ms
3
1
100 ms
0.3
0.1
1 s
10 s
DC
V
= −4.5 V
GS
SINGLE PULSE
R
= 270°C/W
TA = 25°C
ꢄ
JA
0.03
0.01
0.2
0.5
1
3
5
10
30
0.0001 0.001
0.1
1
10
100 300
0.01
SINGLE PULSE TIME (s)
−V , DRAIN − SOURCE VOLTAGE (V)
DS
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
0.2
0.5
0.2
0.1
R JA (t) = r(t) * R JA
q
q
R JA = 270 5C/W
q
0.1
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t1
Single Pulse
t 2
T
− T = P * R JA (t)
q
J
A
0.005
Duty Cycle, D = t1/t2
0.002
0.001
0.0001
0.001
0.01
0.1
t , TIME (s)
1
10
100
300
1
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
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4
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