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FDMA507PZ 参数 Datasheet PDF下载

FDMA507PZ图片预览
型号: FDMA507PZ
PDF下载: 下载PDF文件 查看货源
内容描述: [P 沟道,PowerTrench® MOSFET,-20V,-7.8A,24mΩ]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 7 页 / 294 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号FDMA507PZ的Datasheet PDF文件第1页浏览型号FDMA507PZ的Datasheet PDF文件第2页浏览型号FDMA507PZ的Datasheet PDF文件第3页浏览型号FDMA507PZ的Datasheet PDF文件第5页浏览型号FDMA507PZ的Datasheet PDF文件第6页浏览型号FDMA507PZ的Datasheet PDF文件第7页  
FDMA507PZ  
TYPICAL CHARACTERISTICS (T = 25°C, unless otherwise noted) (continued)  
J
5
4
3
2
1
0
10000  
I
D
= −7.8 A  
V
DD  
= −8 V  
C
C
iss  
V
= −10 V  
DD  
1000  
V
DD  
= −12 V  
oss  
C
rss  
f = 1 MHz  
= 0 V  
V
GS  
100  
0
10  
20  
30  
40  
0.1  
1
10  
20  
Q , GATE CHARGE (nC)  
g
−V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
Figure 7. Gate Charge Characteristics  
Figure 8. Capacitance vs. Drain to Source Voltage  
10−1  
10−2  
10−3  
10−4  
10−5  
10−6  
10−7  
10−8  
10−9  
10−10  
50  
V
GS  
= 0 V  
100 ms  
10  
1 ms  
10 ms  
1
0.1  
T = 125°C  
J
THIS AREA IS  
LIMITEDBY r  
100 ms  
DS(on)  
1 s  
10 s  
DC  
SINGLE PULSE  
T = MAX RATED  
J
T = 25°C  
J
R
= 145°C/W  
q
JA  
T = 25°C  
A
0.01  
0
3
6
9
12  
15  
0.1  
1
10  
80  
−V , GATE TO SOURCE VOLTAGE (V)  
GS  
−V , DRAIN TO SOURCE VOLTAGE (V)  
DS  
Figure 9. Gate Leakage Current vs.  
Gate to Source Voltage  
Figure 10. Forward Bias Safe Operating Area  
1000  
100  
10  
SINGLE PULSE  
R
= 145°C/W  
q
JA  
T = 25°C  
A
1
0.5  
10−4  
10−3  
10−2  
10−1  
t, PULSE WIDTH (s)  
1
10  
100  
1000  
Figure 11. Single Pulse Maximum Power Dissipation  
www.onsemi.com  
4
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