ESDR0524PMUTAG
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
A
Parameter
Reverse Working Voltage
Breakdown Voltage
Symbol
Conditions
I/O Pin to GND (Note 1)
I = 1 mA, I/O Pin to GND
Min
Typ
Max
Unit
V
V
RWM
5.0
V
BR
6.0
V
T
Reverse Leakage Current
Clamping Voltage
I
V
= 5 V, I/O Pin to GND
1.0
15
mA
V
R
RWM
V
I
PP
= 1 A, I/O Pin to GND (8 x 20 ms pulse)
= 0 V, f = 1 MHz between I/O Pins
C
Junction Capacitance
Junction Capacitance
C
C
V
R
V
R
0.3
0.5
0.4
0.8
pF
pF
J
J
= 0 V, f = 1 MHz between I/O Pins and GND
1. TVS devices are normally selected according to the working peak reverse voltage (V
or continuous peak operating voltage level.
), which should be equal or greater than the DC
RWM
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2
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