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BSS138LT3G 参数 Datasheet PDF下载

BSS138LT3G图片预览
型号: BSS138LT3G
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET 200毫安, 50 V的N沟道SOT- 23 [Power MOSFET 200 mA, 50 V N−Channel SOT−23]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 5 页 / 64 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.7
I D , DRAIN CURRENT (AMPS)
0.6
0.5
0.4
0.3
0.2
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0.9
0.8
I D , DRAIN CURRENT (AMPS)
V
GS
= 3.25 V
V
GS
= 3.0 V
V
GS
= 2.75 V
V
GS
= 2.5 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
T
J
= 25°C
V
GS
= 3.5 V
V
DS
= 10 V
− 55°C
25°C
150°C
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−55
−5
45
95
145
0.75
−55
−30
V
GS
= 4.5 V
I
D
= 0.5 A
V
GS
= 10 V
I
D
= 0.8 A
1.25
Figure 2. Transfer Characteristics
RDS(on) , DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
D
= 1.0 mA
Vgs(th) , VARIANCE (VOLTS)
1.125
1
0.875
−5
20
45
70
95
120
145
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
8
6
4
I
D
= 200 mA
2
0
V
DS
= 40 V
T
J
= 25°C
Figure 4. Threshold Voltage Variation
with Temperature
0
500
1000
1500
2000
2500
3000
Q
T
, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
http://onsemi.com
3