BSS138LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Zero Gate Voltage Drain Current
(V
DS
= 25 Vdc, V
GS
= 0 Vdc)
(V
DS
= 50 Vdc, V
GS
= 0 Vdc)
Gate−Source Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 1)
Gate−Source Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−to−Source On−Resistance
(V
GS
= 2.75 Vdc, I
D
< 200 mAdc, T
A
= −40°C to +85°C)
(V
GS
= 5.0 Vdc, I
D
= 200 mAdc)
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 200 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DS
= 25 Vdc, V
GS
= 0, f = 1 MHz)
(V
DG
= 25 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
C
rss
−
−
−
40
12
3.5
50
25
5.0
pF
V
GS(th)
r
DS(on)
−
−
g
fs
100
5.6
−
−
10
3.5
−
mmhos
0.5
−
1.5
Vdc
W
V
(BR)DSS
I
DSS
−
−
I
GSS
−
−
−
−
0.1
0.5
±0.1
mAdc
50
−
−
Vdc
mAdc
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS
(Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(V
DD
= 30 Vdc, I
D
= 0.2 Adc,)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
t
d(on)
t
d(off)
−
−
−
−
20
20
ns
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2