BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 250
mAdc)
Zero Gate Voltage Drain Current
(V
GS
= 0, V
DS
= 100 Vdc)
T
J
= 25°C
T
J
= 125°C
Gate−Body Leakage Current
(V
GS
= 20 Vdc, V
DS
= 0)
V
(BR)DSS
I
DSS
100
−
−
Vdc
mAdc
−
−
−
−
−
−
15
60
50
I
GSS
nAdc
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 1.0 mAdc)
Static Drain−Source On−Resistance
(V
GS
= 10 Vdc, I
D
= 100 mAdc)
Forward Transconductance
(V
DS
= 25 Vdc, I
D
= 100 mAdc)
V
GS(th)
r
DS(on)
g
fs
0.8
−
80
−
5.0
−
2.8
6.0
−
Vdc
W
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
20
9.0
4.0
−
−
−
pF
pF
pF
SWITCHING CHARACTERISTICS
(4)
Turn−On Delay Time
Turn−Off Delay Time
(V
CC
= 30 Vdc, I
C
= 0.28 Adc,
V
GS
= 10 Vdc, R
GS
= 50
W)
t
d(on)
t
d(off)
−
−
20
40
−
−
ns
ns
REVERSE DIODE
Diode Forward On−Voltage
(I
D
= 0.34 Adc, V
GS
= 0 Vdc)
4. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
V
SD
−
−
1.3
V
ORDERING INFORMATION
Device
BSS123LT1G
BSS123LT3G
BVSS123LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
†
3000 / Tape & Reel
10000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
