BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
http://onsemi.com
•
AEC−Q101 Qualified and PPAP Capable
−
BVSS123LT1G
•
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Gate−Source Voltage
−
Continuous
−
Non−repetitive (t
p
≤
50
ms)
Drain Current
−
Continuous (Note 1)
−
Pulsed (Note 2)
Symbol
V
DSS
V
GS
V
GSM
I
D
I
DM
Value
100
±
20
±
40
0.17
0.68
Unit
Vdc
Vdc
Vpk
Adc
170 mAMPS
100 VOLTS
R
DS(on)
= 6
W
N−Channel
3
1
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
& PIN ASSIGNMENT
3
1
2
Drain
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
R
qJA
T
J
, T
stg
Max
225
1.8
556
−55
to +150
Unit
mW
mW/°C
°C/W
°C
SOT−23
CASE 318
STYLE 21
SA
M
G
SA MG
G
1
2
Gate
= Device Code
= Date Code
= Pb−Free Package
Source
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
3. FR−5 = 1.0
0.75
0.062 in.
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2011
October, 2011
−
Rev. 6
1
Publication Order Number:
BSS123LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
