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BD438G 参数 Datasheet PDF下载

BD438G图片预览
型号: BD438G
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料中功率硅PNP晶体管 [Plastic Medium Power Silicon PNP Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 59 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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BD436, BD438, BD440, BD442
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
2.0
1.6
I
C
= 10 mA
100 mA
1.0 A
3.0 A
1.2
0.8
T
J
=
255C
0.4
0
0.05 0.070.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
50 70 100
200
300
500
Figure 1. Collector Saturation Region
hFE, CURRENT GAIN (NORMALIZED)
200
100
80
60
40
20
0
10
2
3
100
I
C
, COLLECTOR CURRENT (AMP)
1
5
Figure 2. Current Gain
T
J
= 25°C
1.6
VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
2.0
10
4.0
T
J
= 150°C
1.0
0.5
dc
SECONDARY BREAKDOWN
THERMAL LIMIT T
C
= 25°C
BONDING WIRE LIMIT
5 ms
1.2
0.8
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2.0 V
CURVES APPLY BELOW RATED V
CEO
BD438
BD440
BD442
1.0
2.0
5.0
10
20
50
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0
0.005 0.01 0.02 0.030.05
0.1 0.2 0.3 0.5
1.0 2.0 3.0 4.0
0.1
I
C
, COLLECTOR CURRENT (AMP)
Figure 3. “On” Voltage
Figure 4. Active Region Safe Operating Area
http://onsemi.com
3