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BD438G 参数 Datasheet PDF下载

BD438G图片预览
型号: BD438G
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料中功率硅PNP晶体管 [Plastic Medium Power Silicon PNP Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 4 页 / 59 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号BD438G的Datasheet PDF文件第1页浏览型号BD438G的Datasheet PDF文件第3页浏览型号BD438G的Datasheet PDF文件第4页  
BD436, BD438, BD440, BD442  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Collector−Emitter Breakdown Voltage  
(I = 100 mA, I = 0)  
BD436  
BD438  
BD440  
BD442  
V
32  
45  
60  
80  
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
B
Collector−Base Breakdown Voltage  
(I = 100 mA, I = 0)  
BD436  
BD438  
BD440  
BD442  
V
V
32  
45  
60  
80  
Vdc  
C
B
Emitter−Base Breakdown Voltage  
(I = 100 mA, I = 0)  
5.0  
Vdc  
E
C
Collector Cutoff Current  
(V = 32 V, I = 0)  
I
mAdc  
CBO  
BD436  
BD438  
BD440  
BD442  
0.1  
0.1  
0.1  
0.1  
CB  
E
(V = 45 V, I = 0)  
CB  
E
(V = 60 V, I = 0)  
CB  
E
(V = 80 V, I = 0)  
CB  
E
Emitter Cutoff Current  
I
1.0  
mAdc  
EBO  
(V = 5.0 V)  
EB  
DC Current Gain  
BD436  
BD438  
BD440  
BD442  
h
FE  
h
FE  
h
FE  
40  
30  
20  
15  
(I = 10 mA, V = 5.0 V)  
C
CE  
DC Current Gain  
(I = 500 mA, V = 1.0 V)  
BD436  
BD438  
BD440  
BD442  
85  
85  
40  
40  
475  
475  
475  
475  
C
CE  
DC Current Gain  
(I = 2.0 A, V = 1.0 V)  
BD436  
BD438  
BD440  
BD442  
50  
40  
25  
15  
C
CE  
Collector Saturation Voltage  
(I = 2.0 A, I = 0.2 A)  
V
Vdc  
CE(sat)  
BD436  
BD438  
BD440  
BD442  
0.5  
0.7  
0.8  
0.8  
C
B
(I = 3.0 A, I = 0.3 A)  
C
B
Base−Emitter On Voltage  
(I = 2.0 A, V = 1.0 V)  
BD436/BD438  
BD440/BD442  
V
1.1  
1.5  
Vdc  
BE(ON)  
C
CE  
Current−Gain − Bandwidth Product  
(V = 1.0 V, I = 250 mA, f = 1.0 MHz)  
f
3.0  
MHz  
T
CE  
C
http://onsemi.com  
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