ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 10 µA, V
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
h
FE
—
—
—
90
150
270
—
—
—
—
= 5.0 V)
CE
C
(I = 2.0 mA, V
C CE
= 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
110
200
420
180
290
520
220
450
800
Collector–Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
V
V
—
—
—
—
0.25
0.6
V
V
C
B
CE(sat)
Collector–Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA)
—
—
0.7
0.9
—
—
C
B
BE(sat)
Base–Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Voltage (I = 2.0 mA, V
= 5.0 V)
= 5.0 V)
V
BE(on)
580
—
660
—
700
770
mV
C
CE
CE
Base–Emitter Voltage (I = 10 mA, V
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
100
—
—
—
—
MHz
T
(I = 10 mA, V
C
= 5.0 Vdc, f = 100 MHz)
CE
Output Capacitance (V
= 10 V, f = 1.0 MHz)
C
4.5
pF
dB
CB
Noise Figure (I = 0.2 mA,
obo
NF
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
C
V
CE
= 5.0 Vdc, R = 2.0 kΩ,
—
—
—
—
10
4.0
S
f = 1.0 kHz, BW = 200 Hz)
2.0
1.5
1.0
0.9
V
= 10 V
= 25°C
T
= 25°C
CE
A
T
A
0.8
0.7
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V = 10 V
CE
0.6
0.5
0.4
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.2
0.5
1.0
2.0
5.0 10
20
50
100
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I
, COLLECTOR CURRENT (mAdc)
I , COLLECTOR CURRENT (mAdc)
C
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T
= 25
°
C
–55°C to +125°C
A
I
= 200 mA
C
I
=
I
=
I
= 50 mA
I = 100 mA
C
C
C
C
10 mA 20 mA
0.02
0.1
1.0
, BASE CURRENT (mA)
10 20
0.2
1.0
I , COLLECTOR CURRENT (mA)
C
10
100
I
B
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ONSEMI ]
