Order this document
by BC846AWT1/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol BC846 BC847 BC848
Unit
V
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
V
V
V
65
80
45
50
30
30
CEO
CBO
EBO
V
1
2
6.0
100
6.0
100
5.0
100
V
CASE 419–02, STYLE 3
SOT–323/SC–70
I
C
mAdc
Symbol
Max
Unit
Total Device Dissipation FR–5 Board, (1)
= 25°C
P
D
150
mW
T
A
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
833
2.4
°C/W
mW/°C
°C
JA
D
P
Junction and Storage Temperature
DEVICE MARKING
T , T
J stg
–55 to +150
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 10 mA)
C
BC846 Series
BC847 Series
BC848 Series
V
65
45
30
—
—
—
—
—
—
V
(BR)CEO
Collector–Emitter Breakdown Voltage
BC846 Series
BC847 Series
BC848 Series
V
80
50
30
—
—
—
—
—
—
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = 10 µA, V
C
= 0)
EB
Collector–Base Breakdown Voltage
(I = 10 A)
C
BC846 Series
BC847 Series
BC848 Series
V
V
80
50
30
—
—
—
—
—
—
Emitter–Base Breakdown Voltage
(I = 1.0 A)
E
BC846 Series
BC847 Series
BC848 Series
6.0
6.0
5.0
—
—
—
—
—
—
Collector Cutoff Current (V
= 30 V)
= 30 V, T = 150°C)
I
—
—
—
—
15
5.0
nA
µA
CB
CB
CBO
(V
A
1. FR–5 = 1.0 x 0.75 x 0.062 in
Thermal Clad is a trademark of the Bergquist Company.
MMotootorroollaa, SInmc. a19ll9–6Signal Transistors, FETs and Diodes Device Data
1
ONSEMI [ ONSEMI ]
