欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC817-40LT3G 参数 Datasheet PDF下载

BC817-40LT3G图片预览
型号: BC817-40LT3G
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 10 页 / 114 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号BC817-40LT3G的Datasheet PDF文件第1页浏览型号BC817-40LT3G的Datasheet PDF文件第3页浏览型号BC817-40LT3G的Datasheet PDF文件第4页浏览型号BC817-40LT3G的Datasheet PDF文件第5页浏览型号BC817-40LT3G的Datasheet PDF文件第6页浏览型号BC817-40LT3G的Datasheet PDF文件第7页浏览型号BC817-40LT3G的Datasheet PDF文件第8页浏览型号BC817-40LT3G的Datasheet PDF文件第9页  
BC817−16LT1G, BC817−25LT1G, BC817−40LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mA)
Collector
−Emitter
Breakdown Voltage
(V
EB
= 0, I
C
= 10
mA)
Emitter
−Base
Breakdown Voltage
(I
E
= 1.0
mA)
Collector Cutoff Current
(V
CB
= 20 V)
(V
CB
= 20 V, T
A
= 150°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 100 mA, V
CE
= 1.0 V)
(I
C
= 500 mA, V
CE
= 1.0 V)
Collector
−Emitter
Saturation Voltage
(I
C
= 500 mA, I
B
= 50 mA)
Base
−Emitter
On Voltage
(I
C
= 500 mA, V
CE
= 1.0 V)
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
(I
C
= 10 mA, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
f
T
C
obo
100
10
MHz
pF
BC817−16
BC817−25
BC817−40
h
FE
100
160
250
40
250
400
600
0.7
1.2
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
45
50
5.0
V
V
V
Symbol
Min
Typ
Max
Unit
100
5.0
nA
mA
V
CE(sat)
V
BE(on)
V
V
ORDERING INFORMATION
Device
BC817−16LT1G
BC817−16LT3G
BC817−25LT1G
BC817−25LT3G
BC817−40LT1G
BC817−40LT3G
6C
6B
6A
Specific Marking
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2