BC817-16LT1G,
BC817-25LT1G,
BC817-40LT1G
General Purpose
Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
45
50
5.0
500
Unit
V
V
V
mAdc
1
2
SOT−23
CASE 318
STYLE 6
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−
Emitter Voltage
Collector
−
Base Voltage
Emitter
−
Base Voltage
Collector Current
−
Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−55
to +150
mW
mW/°C
°C/W
°C
6x
M
G
6x M
G
G
1
= Device Code
x = A, B, or C
= Date Code*
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 11
1
Publication Order Number:
BC817−16LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
