ADM1032
TYPICAL PERFORMANCE CHARACTERISTICS
20
TEMPERATURE ERROR (C)
TEMPERATURE ERROR (C)
16
12
8
4
0
−4
−8
−12
−16
0
10
LEAKAGE RESISTANCE (MW)
100
D+ To V
DD
D+ To GND
1.0
0.5
0
−0.5
0
20
40
60
80
100
120
TEMPERATURE (C)
Figure 3. Temperature Error vs. Leakage
Resistance
13
TEMPERATURE ERROR (C)
TEMPERATURE ERROR (C)
11
9
7
5
3
1
−1
100K
V
IN
= 10 mV p−p
1M
10M
100M
V
IN
= 40 mV p−p
12
10
8
6
4
2
0
Figure 4. Temperature Error vs. Actual
Temperature Using 2N3906
V
IN
= 250 mV p−p
V
IN
= 100 mV p−p
10
FREQUENCY (Hz)
1M
FREQUENCY (Hz)
Figure 5. Temperature Error vs. Differential Mode
Noise Frequency
18
TEMPERATURE ERROR (C)
16
14
12
10
8
6
4
2
0
1
6
11
16
21
26
31
36
Figure 6. Temperature Error vs. Power Supply
Noise Frequency
2.0
SUPPLY CURRENT (mA)
1.5
1.0
V
DD
= 5 V
0.5
0.0
0.01
V
DD
= 3 V
0.1
1
10
100
CAPACITANCE (nF)
CONVERSION RATE (Hz)
Figure 7. Temperature Error vs. Capacitance
Between D+ and D−
http://onsemi.com
5
Figure 8. Operating Supply Current vs.
Conversion Rate
ONSEMI [ ON SEMICONDUCTOR ]
