74HCT14
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Temperature Limit
V
CC
Symbol
V
T)
max
V
T)
min
V
T*
max
V
T*
min
V
H
max
V
H
min
V
OH
Parameter
Maximum Positive−Going
Input Threshold Voltage
Minimum Positive−Going
Input Threshold Voltage
Maximum Negative−Going
Input Threshold Voltage
Minimum Negative−Going
Input Threshold Voltage
Maximum Hysteresis
Voltage
Minimum Hysteresis
Voltage
Minimum High−Level
Output Voltage
Test Conditions
V
O
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
O
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
O
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
O
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
O
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
O
= 0.1 V or V
CC
– 0.1 V
|I
out
|
v
20
mA
V
I
< V
T*
min
|I
out
|
v
20
mA
V
I
< V
T*
min
|I
out
|
v
4.0 mA
V
OL
Maximum Low−Level
Output Voltage
V
I
≥
V
T)
max
|I
out
|
v
20
mA
V
I
≥
V
T)
max
|I
out
|
v
4.0 mA
I
IK
I
CC
Maximum Input
Leakage Current
Maximum Quiescent
Supply Current
(per package)
V
I
= V
CC
or GND
V
I
= V
CC
or GND
I
out
= 0
mA
(V)
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
5.5
4.5
4.5
5.5
4.5
5.5
5.5
0.4
0.4
4.4
5.4
3.98
0.1
0.1
0.26
$0.1
2.0
0.5
0.6
1.4
1.5
0.4
0.4
4.4
5.4
3.84
0.1
0.1
0.33
$1.0
20
1.2
1.4
1.2
1.4
0.5
0.6
1.4
1.5
0.4
04
4.4
5.4
3.7
0.1
0.1
0.4
$1.0
40
mA
mA
V
V
*55_C
to 25_C
Min
Max
1.9
2.1
1.2
1.4
1.2
1.4
0.5
0.6
1.4
1.5
v85_C
Min
Max
1.9
2.1
1.2
1.4
1.2
1.4
v125_C
Min
Max
1.9
2.1
Unit
V
V
w*55_C
DI
CC
Additional Quiescent
Supply Current
V
I
= 2.4 V, Any One Input
V
I
= V
CC
or GND, Other Inputs
l
out
= 0
mA
5.5
2.9
25_C to 125_C
2.4
mA
7. Information on typical parametric values can be found in the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS
(C
L
= 50 pF; Input t
r
= t
f
= 6.0 ns)
Guaranteed Limit
*55_C
to 25_C
Symbol
Parameter
Test Conditions
Figures
Min
Max
v85_C
Min
Max
v125_C
Min
Max
Unit
t
PLH
,
t
PHL
t
TLH
,
t
THL
Maximum Propagation
Delay, Input A to Output
Y (L to H)
Maximum Output
Transition Time, Any
Output
V
CC
= 5.0 V
$10%
C
L
= 50 pF, Input t
r
= t
f
= 6.0 ns
V
CC
= 5.0 V
$10%
C
L
= 50 pF, Input t
r
= t
f
= 6.0 ns
1&2
32
40
48
ns
1&2
15
19
22
ns
8. For propagation delays with loads other than 50 pF, and information on typical parametric values, see the ON Semiconductor High−Speed
CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance, per Inverter (Note 9)
32
pF
9. Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
http://onsemi.com
4
ONSEMI [ ON SEMICONDUCTOR ]
