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74HCT08DR2GH 参数 Datasheet PDF下载

74HCT08DR2GH图片预览
型号: 74HCT08DR2GH
PDF下载: 下载PDF文件 查看货源
内容描述: 四2输入与门随着LSTTL兼容输入高性能硅栅CMOS [Quad 2-Input AND Gate With LSTTL−Compatible Inputs High−Performance Silicon−Gate CMOS]
分类和应用: 栅极逻辑集成电路光电二极管
文件页数/大小: 7 页 / 138 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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74HCT08
ORDERING INFORMATION
Device
74HCT08DR2G
74HCT08DR2GH
74HCT08DTR2G
Package
SOIC−14
(Pb−Free)
SOIC−14
(Halide−Free)
TSSOP−14*
2500/Tape & Reel
Shipping
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*This package is inherently Pb−Free.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol
V
CC
V
in
I
in
I
out
I
CC
P
D
T
stg
T
L
V
out
Parameter
Value
Unit
V
V
V
mA
mA
mA
mW
_C
_C
260
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
– 0.5 to + 7.0
– 0.5 to + 7.0
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
DC Output Current, per Pin
DC Supply Current, V
CC
and GND Pins
Power Dissipation in Still Air,
Storage Temperature
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
SOIC Package†
TSSOP Package†
– 0.5 to V
CC
+ 0.5
±20
±25
±50
500
450
– 65 to + 150
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND
v
(V
in
or V
out
)
v
V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package:
6.1 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
in
V
out
T
A
t
r
, t
f
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
Input Rise and Fall Time
(Figure 1)
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Min
4.5
0
0
−55
0
0
0
Max
5.5
5.5
V
CC
+125
1000
500
400
Unit
V
V
V
_C
ns
http://onsemi.com
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