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74HC74 参数 Datasheet PDF下载

74HC74图片预览
型号: 74HC74
PDF下载: 下载PDF文件 查看货源
内容描述: 双D触发器具有​​置位和复位高性能硅栅CMOS [Dual D Flip−Flop with Set and Reset High−Performance Silicon−Gate CMOS]
分类和应用: 触发器
文件页数/大小: 8 页 / 133 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号74HC74的Datasheet PDF文件第1页浏览型号74HC74的Datasheet PDF文件第3页浏览型号74HC74的Datasheet PDF文件第4页浏览型号74HC74的Datasheet PDF文件第5页浏览型号74HC74的Datasheet PDF文件第6页浏览型号74HC74的Datasheet PDF文件第7页浏览型号74HC74的Datasheet PDF文件第8页  
74HC74  
PIN ASSIGNMENT  
LOGIC DIAGRAM  
1
RESET 1  
DATA 1  
1
2
14  
13 RESET 2  
12  
V
RESET 1  
CC  
5
6
2
3
DATA 1  
Q1  
Q1  
3
4
CLOCK 1  
SET 1  
DATA 2  
CLOCK 1  
11 CLOCK 2  
10 SET 2  
4
Q1  
Q1  
5
6
7
SET 1  
9
8
Q2  
Q2  
13  
RESET 2  
GND  
9
8
12  
11  
DATA 2  
Q2  
Q2  
FUNCTION TABLE  
CLOCK 2  
Inputs  
Outputs  
10  
Set Reset Clock Data  
Q
Q
SET 2  
PIN 14 = V  
CC  
PIN 7 = GND  
L
H
L
H
H
H
H
H
H
L
L
H
H
H
H
H
X
X
X
X
X
X
H
L
X
X
X
H
L
H*  
H
L
L
H
H*  
L
H
L
H
No Change  
No Change  
No Change  
*Both outputs will remain high as long as Set and Reset are low, but the output  
states are unpredictable if Set and Reset go high simultaneously.  
MAXIMUM RATINGS  
Symbol  
Parameter  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this highimpedance cir-  
V
– 0.5 to + 7.0  
CC  
V
in  
– 0.5 to V + 0.5  
V
CC  
V
out  
– 0.5 to V + 0.5  
V
CC  
I
±20  
±25  
±50  
mA  
mA  
mA  
mW  
in  
I
DC Output Current, per Pin  
out  
CC  
cuit. For proper operation, V and  
in  
I
DC Supply Current, V and GND Pins  
CC  
V
out  
should be constrained to the  
P
Power Dissipation in Still Air,  
SOIC Package†  
TSSOP Package†  
500  
450  
range GND v (V or V ) v V  
.
D
in  
out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
T
stg  
Storage Temperature  
– 65 to + 150  
_C  
_C  
level (e.g., either GND or V ).  
CC  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(SOIC or TSSOP Package)  
L
Unused outputs must be left open.  
260  
300  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress  
ratings only. Functional operation above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Operating Conditions may affect device  
reliability.  
†Derating — SOIC Package: – 7 mW/_C from 65_ to 125_C  
TSSOP Package: 6.1 mW/_C from 65_ to 125_C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
Unit  
V
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
6.0  
CC  
V , V  
in out  
V
V
CC  
T
A
– 55  
+ 125  
_C  
ns  
t , t  
Input Rise and Fall Time  
(Figures 1, 2, 3)  
V
V
V
V
= 2.0 V  
= 3.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
0
1000  
600  
500  
400  
r
f
CC  
CC  
CC  
CC  
http://onsemi.com  
2
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