欢迎访问ic37.com |
会员登录 免费注册
发布采购

74HC14DR2G 参数 Datasheet PDF下载

74HC14DR2G图片预览
型号: 74HC14DR2G
PDF下载: 下载PDF文件 查看货源
内容描述: 六角施密特触发器逆变器高性能硅栅CMOS [Hex Schmitt−Trigger Inverter High−Performance Silicon−Gate CMOS]
分类和应用: 触发器
文件页数/大小: 9 页 / 128 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号74HC14DR2G的Datasheet PDF文件第1页浏览型号74HC14DR2G的Datasheet PDF文件第2页浏览型号74HC14DR2G的Datasheet PDF文件第3页浏览型号74HC14DR2G的Datasheet PDF文件第4页浏览型号74HC14DR2G的Datasheet PDF文件第6页浏览型号74HC14DR2G的Datasheet PDF文件第7页浏览型号74HC14DR2G的Datasheet PDF文件第8页浏览型号74HC14DR2G的Datasheet PDF文件第9页  
74HC14
AC CHARACTERISTICS
(C
L
= 50pF, Input t
r
= t
f
= 6ns)
Symbol
t
PLH
,
t
PHL
Parameter
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
Guaranteed Limit
−55
to 25°C
75
30
15
13
75
27
15
13
10
≤85°C
95
40
19
16
95
32
19
16
10
≤125°C
110
55
22
19
110
36
22
19
10
Unit
ns
t
TLH
,
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
ns
C
in
Maximum Input Capacitance
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
Typical @ 25°C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Per Inverter)*
22
pF
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC2
f + I
CC
V
CC
. For load considerations, see Chapter 2 of the
ON Semiconductor High−Speed CMOS Data Book (DL129/D).
t
f
90%
INPUT A
50%
10%
t
PLH
90%
OUTPUT Y
50%
10%
t
TLH
t
r
V
CC
GND
t
PHL
t
THL
Figure 1. Switching Waveforms
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
C
L
*
*Includes all probe and jig capacitance
Figure 2. Test Circuit
http://onsemi.com
5