欢迎访问ic37.com |
会员登录 免费注册
发布采购

74HC14DR2G 参数 Datasheet PDF下载

74HC14DR2G图片预览
型号: 74HC14DR2G
PDF下载: 下载PDF文件 查看货源
内容描述: 六角施密特触发器逆变器高性能硅栅CMOS [Hex Schmitt−Trigger Inverter High−Performance Silicon−Gate CMOS]
分类和应用: 触发器
文件页数/大小: 9 页 / 128 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号74HC14DR2G的Datasheet PDF文件第1页浏览型号74HC14DR2G的Datasheet PDF文件第2页浏览型号74HC14DR2G的Datasheet PDF文件第3页浏览型号74HC14DR2G的Datasheet PDF文件第5页浏览型号74HC14DR2G的Datasheet PDF文件第6页浏览型号74HC14DR2G的Datasheet PDF文件第7页浏览型号74HC14DR2G的Datasheet PDF文件第8页浏览型号74HC14DR2G的Datasheet PDF文件第9页  
74HC14
DC CHARACTERISTICS
(Voltages Referenced to GND)
Symbol
V
T+
max
Parameter
Maximum Positive−Going Input
Threshold Voltage
(Figure 3)
Minimum Positive−Going Input
Threshold Voltage
(Figure 3)
Maximum Negative−Going Input
Threshold Voltage
(Figure 3)
Minimum Negative−Going Input
Threshold Voltage
(Figure 3)
Maximum Hysteresis Voltage
(Figure 3)
Condition
V
out
= 0.1V
|I
out
|
20mA
V
CC
(V)
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
2.4mA
|I
out
|
4.0mA
|I
out
|
5.2mA
3.0
4.5
6.0
2.0
4.5
6.0
|I
out
|
2.4mA
|I
out
|
4.0mA
|I
out
|
5.2mA
3.0
4.5
6.0
6.0
6.0
Guaranteed Limit
−55
to 25°C
1.50
2.15
3.15
4.20
1.0
1.5
2.3
3.0
0.9
1.4
2.0
2.6
0.3
0.5
0.9
1.2
1.20
1.65
2.25
3.00
0.20
0.25
0.40
0.50
1.9
4.4
5.9
2.48
3.98
5.48
0.1
0.1
0.1
0.26
0.26
0.26
±0.1
2.0
≤85°C
1.50
2.15
3.15
4.20
0.95
1.45
2.25
2.95
0.95
1.45
2.05
2.65
0.3
0.5
0.9
1.2
1.20
1.65
2.25
3.00
0.20
0.25
0.40
0.50
1.9
4.4
5.9
2.34
3.84
5.34
0.1
0.1
0.1
0.33
0.33
0.33
±1.0
20
≤125°C
1.50
2.15
3.15
4.20
0.95
1.45
2.25
2.95
0.95
1.45
2.05
2.65
0.3
0.5
0.9
1.2
1.20
1.65
2.25
3.00
0.20
0.25
0.40
0.50
1.9
4.4
5.9
2.20
3.70
5.20
0.1
0.1
0.1
0.40
0.40
0.40
±1.0
40
mA
mA
V
Unit
V
V
T+
min
V
out
= 0.1V
|I
out
|
20mA
V
V
T−
max
V
out
= V
CC
0.1V
|I
out
|
20mA
V
V
T−
min
V
out
= V
CC
0.1V
|I
out
|
20mA
V
V
H
max
Note 2
V
out
= 0.1V or V
CC
0.1V
|I
out
|
20mA
V
V
H
min
Note 2
Minimum Hysteresis Voltage
(Figure 3)
V
out
= 0.1V or V
CC
0.1V
|I
out
|
20mA
V
V
OH
Minimum High−Level Output
Voltage
V
in
V
T−
min
|I
out
|
20mA
V
in
V
T−
min
V
V
OL
Maximum Low−Level Output
Voltage
V
in
V
T+
max
|I
out
|
20mA
V
in
V
T+
max
I
in
I
CC
Maximum Input Leakage
Current
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
V
in
= V
CC
or GND
I
out
= 0mA
1. Information on typical parametric values along with frequency or heavy load considerations can be found in Chapter 2 of the ON
Semiconductor High−Speed CMOS Data Book (DL129/D).
2. V
H
min > (V
T+
min)
(V
T−
max); V
H
max = (V
T+
max)
(V
T−
min).
http://onsemi.com
4