2N7000
2.0
1.8
I D, DRAIN CURRENT (AMPS)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1.0
2.0 3.0 4.0 5.0
6.0
7.0 8.0
VDS, DRAIN SOURCE VOLTAGE (VOLTS)
TA = 25°C
I D, DRAIN CURRENT (AMPS)
VGS = 10 V
9V
8V
7V
6V
5V
4V
3V
9.0
10
0
1.0
2.0 3.0 4.0
5.0
6.0 7.0 8.0
VGS, GATE SOURCE VOLTAGE (VOLTS)
9.0
10
0.8
0.6
0.4
0.2
1.0
VDS = 10 V
-55°C
125°C
25°C
Figure 1. Ohmic Region
Figure 2. Transfer Characteristics
r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VGS = 10 V
ID = 200 mA
VGS(th) , THRESHOLD VOLTAGE (NORMALIZED)
2.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60
-20
+20
+60
T, TEMPERATURE (°C)
+100
+140
VDS = VGS
ID = 1.0 mA
Figure 3. Temperature versus Static
Drain–Source On–Resistance
Figure 4. Temperature versus Gate
Threshold Voltage
ORDERING INFORMATION
Device
2N7000
2N7000RLRA
2N7000RLRM
2N7000RLRP
2N7000ZL1
Package
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
1000 Unit/Box
2000 Tape & Reel
2000 Ammo Pack
2000 Ammo Pack
2000 Ammo Pack
http://onsemi.com
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ONSEMI [ ON SEMICONDUCTOR ]
