2N7000
Preferred Device
Small Signal MOSFET
200 mAmps, 60 Volts
N–Channel TO–92
MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Non–repetitive (tp
≤
50
µs)
Drain Current
– Continuous
– Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature
Range
Symbol
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
TJ, Tstg
Value
60
60
±20
±40
200
500
350
2.8
–55 to
+150
mW
mW/°C
°C
S
G
Unit
Vdc
Vdc
Vdc
Vpk
mAdc
http://onsemi.com
200 mAMPS
60 VOLTS
RDS(on) = 5
Ω
N–Channel
D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to
Ambient
Maximum Lead Temperature for
Soldering Purposes, 1/16″ from case
for 10 seconds
Symbol
R
θJA
TL
Max
357
300
Unit
°C/W
°C
12
3
TO–92
CASE 29
Style 22
MARKING DIAGRAM
& PIN ASSIGNMENT
2N7000
YWW
1
Source
2
Gate
Y
WW
3
Drain
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 5
Publication Order Number:
2N7000/D
ONSEMI [ ON SEMICONDUCTOR ]
