2N6027, 2N6028
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak Current*
(V
S
= 10 Vdc, R
G
= 1 MW)
(V
S
= 10 Vdc, R
G
= 10 kW)
Offset Voltage*
(V
S
= 10 Vdc, R
G
= 1 MW)
(V
S
= 10 Vdc, R
G
= 10 kW)
Valley Current*
(V
S
= 10 Vdc, R
G
= 1 MW)
(V
S
= 10 Vdc, R
G
= 10 k
W)
(V
S
= 10 Vdc, R
G
= 200
W)
Gate to Anode Leakage Current*
(V
S
= 40 Vdc, T
A
= 25°C, Cathode Open)
(V
S
= 40 Vdc, T
A
= 75°C, Cathode Open)
Gate to Cathode Leakage Current
(V
S
= 40 Vdc, Anode to Cathode Shorted)
Forward Voltage*
(I
F
= 50 mA Peak) (Note 4)
Peak Output Voltage*
(V
G
= 20 Vdc, C
C
= 0.2
mF)
Pulse Voltage Rise Time
(V
B
= 20 Vdc, C
C
= 0.2
mF)
*Indicates JEDEC Registered Data
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
+V
B
A
G
V
AK
K
R2
− V
S
=
R1
R1
V
R1 + R2
B
I
A
+
V
AK
R
G
= R1 R2
R1 + R2
R
G
V
S
V
F
V
V
1A − Programmable Unijunction
with Program" Resistors
R1 and R2
1B − Equivalent Test Circuit for
Figure 1A used for electrical
characteristics testing
(also see Figure 2)
I
GAO
I
P
I
V
I
F
V
A
V
S
−V
P
V
T
= V
P
− V
S
2N6027
2N6028
2N6027
2N6028
1
2N6027
2N6028
(Both Types)
1,4,5
2N6027
2N6028
2N6027
2N6028
2N6027
2N6028
−
I
GAO
−
−
−
1,6
3,7
3
I
GKS
V
F
V
o
t
r
−
−
6.0
−
1.0
3.0
5.0
0.8
11
40
10
−
50
1.5
−
80
nAdc
V
V
ns
I
V
−
−
70
25
1.5
1.0
18
18
150
150
−
−
50
25
−
−
−
−
V
T
0.2
0.2
0.2
0.70
0.50
0.35
1.6
0.6
0.6
mA
Fig. No.
2,9,11
Symbol
I
P
−
−
−
−
1.25
0.08
4.0
0.70
2.0
0.15
5.0
1.0
V
Min
Typ
Max
Unit
mA
mA
nAdc
I
A
I
A
IC − Electrical Characteristics
Figure 1. Electrical Characterization
+V
B
+V
510 k
R
R
G
= R/2
V
S
= V
B/2
(See Figure 1)
R
C
C
20
W
v
o
27 k
0.6 V
t
f
t
16 k
V
o
6.0 V
Adjust
for
Turn−on
Threshold
V
B
100 k
1.0%
−
I
P
(SENSE)
100
mV
= 1.0 nA
+
2N5270
0.01
mF
Scope
20
Put
Under
Test
Figure 2. Peak Current (I
P
) Test Circuit
http://onsemi.com
3
Figure 3. V
o
and t
r
Test Circuit
ONSEMI [ ON SEMICONDUCTOR ]
