2N6027, 2N6028
Preferred Device
Programmable
Unijunction Transistor
Programmable Unijunction
Transistor Triggers
http://onsemi.com
Designed to enable the engineer to “program’’ unijunction
characteristics such as R
BB
,
h,
I
V
, and I
P
by merely selecting
two resistor values. Application includes thyristor−trigger, oscillator,
pulse and timing circuits. These devices may also be used in special
thyristor applications due to the availability of an anode gate. Supplied
in an inexpensive TO−92 plastic package for high−volume
requirements, this package is readily adaptable for use in automatic
insertion equipment.
Features
PUTs
40 VOLTS, 300 mW
G
A
K
•
•
•
•
•
•
Programmable − R
BB
,
h,
I
V
and I
P
Low On−State Voltage − 1.5 V Maximum @ I
F
= 50 mA
Low Gate to Anode Leakage Current − 10 nA Maximum
High Peak Output Voltage − 11 V Typical
Low Offset Voltage − 0.35 V Typical (R
G
= 10 kW)
Pb−Free Packages are Available*
1
TO−92 (TO−226AA)
CASE 029
STYLE 16
2
3
MARKING DIAGRAM
2N
602x
AYWW
G
G
= Device Code
x = 7 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
2N602x
PIN ASSIGNMENT
1
2
3
Anode
Gate
Cathode
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
1
May, 2006 − Rev.6
Publication Order Number:
2N6027/D
ONSEMI [ ON SEMICONDUCTOR ]
