2N4400 2N4401
STATIC CHARACTERISTICS
3.0
h FE, NORMALIZED CURRENT GAIN
2.0
VCE = 1.0 V
VCE = 10 V
TJ = 125°C
1.0
25°C
0.7
0.5
0.3
0.2
0.1
– 55°C
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
30
50
70
100
200
300
500
Figure 15. DC Current Gain
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
TJ = 25°C
0.8
0.6
IC = 1.0 mA
10 mA
100 mA
500 mA
0.4
0.2
0
0.01
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
2.0
3.0
5.0 7.0
10
20
30
50
Figure 16. Collector Saturation Region
1.0
TJ = 25°C
0.8
VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/
°
C)
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.1 0.2
q
VC for VCE(sat)
0.6
VBE @ VCE = 10 V
0.4
0.2
VCE(sat) @ IC/IB = 10
q
VB for VBE
0.5
50
1.0 2.0
5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
500
0
0.1 0.2
0.5
50
1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (mA)
100 200
500
Figure 17. “On” Voltages
Figure 18. Temperature Coefficients
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
ONSEMI [ ON SEMICONDUCTOR ]
