2N4400 2N4401
SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Bandwidth = 1.0 Hz
10
IC = 1.0 mA, RS = 150
Ω
IC = 500
µA,
RS = 200
Ω
IC = 100
µA,
RS = 2.0 kΩ
IC = 50
µA,
RS = 4.0 kΩ
RS = OPTIMUM
RS =
SOURCE
RS =
RESISTANCE
10
f = 1.0 kHz
8.0
NF, NOISE FIGURE (dB)
IC = 50
µA
IC = 100
µA
IC = 500
µA
IC = 1.0 mA
8.0
NF, NOISE FIGURE (dB)
6.0
6.0
4.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2
2.0
0
0.5 1.0 2.0 5.0
10
20
50
100
50
100 200
500 1.0 k 2.0 k
5.0 k 10 k 20 k
50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
f, FREQUENCY (kHz)
Figure 9. Frequency Effects
Figure 10. Source Resistance Effects
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
selected from both the 2N4400 and 2N4401 lines, and the
This group of graphs illustrates the relationship between
same units were used to develop the correspondingly num-
hfe and other “h” parameters for this series of transistors. To
bered curves on each graph.
obtain these curves, a high–gain and a low–gain unit were
300
hie , INPUT IMPEDANCE (OHMS)
200
hfe , CURRENT GAIN
50 k
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
20 k
10 k
5.0 k
100
70
50
30
20
0.1
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
2.0 k
1.0 k
500
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
10
h re , VOLTAGE FEEDBACK RATIO (X 10
–4
)
hoe, OUTPUT ADMITTANCE (
m
mhos)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
100
50
Figure 12. Input Impedance
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
20
10
5.0
2.0
1.0
0.1
2N4401 UNIT 1
2N4401 UNIT 2
2N4400 UNIT 1
2N4400 UNIT 2
0.2
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
4
Figure 14. Output Admittance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ONSEMI [ ON SEMICONDUCTOR ]
