15C01SS
1000
7
5
hFE -- IC
VCE=2V
1000
7
VCE(sat) -- IC
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
25°C
5
3
2
DC Current Gain, hFE
Ta=75
°
C
3
2
--25
°C
100
7
5
3
2
100
7
5
3
1.0
C
5
°
C
=7
5
°
Ta
--2
25
°
C
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
1000
7
5 7 1000
IT05492
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
10000
7
5 7 1000
IT05493
VCE(sat) -- IC
VBE(sat) -- IC
IC / IB=20
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
5
3
2
100
7
5
3
2
=7
Ta
25
5
°
C
5
°
C
--2
1000
7
5
3
2
Ta= --25
°
C
75
°
C
25°C
°
C
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
10
5 7 1000
IT05494
100
1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
7
5 7 1000
IT05495
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT -- MHz
fT -- IC
VCE=2V
Output Capacitance, Cob -- pF
7
5
5
3
2
3
2
100
7
5
1.0
1.0
0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
2
3
5 7 10
2
3
5 7 100
2
3
Collector-to-Base Voltage, VCB -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
IT05497
250
Ron -- IB
IN
Collector Current, IC -- mA
5 7 1000
IT05496
PC -- Ta
f=1MHz
1kΩ
1kΩ
IB
OUT
Collector Dissipation, PC -- mW
200
M
ON-resistance, Ron --
Ω
ou
nt
ed
on
150
ag
las
se
po
xy
100
bo
ard
(2
0
✕
3
0
✕
50
1.6
m
m
)
160
0
2
3
5
7
1.0
2
3
5
Base Current, IB -- mA
10
IT06067
7
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°
C
IT05520
No.7508-3/6
ONSEMI [ ON SEMICONDUCTOR ]
