15C01SS
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=15V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=10mA
VCE=2V, IC=50mA
VCB=10V, f=1MHz
IC=200mA, IB=10mA
IC=200mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
20
15
5
30
77
40
300
330
3.2
150
0.9
300
1.2
Conditions
Ratings
min
typ
max
0.1
0.1
800
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
μA
μA
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
220μF
VBE= --5V
IC=20IB1= --20IB2=500mA
+
470μF
VCC=5V
RB
RL
Ordering Information
Device
15C01SS-TL-E
Package
SSFP
Shipping
8,000pcs./reel
memo
Pb Free
200
IC -- VCE
mA
0.9
0.8m
A
0.7mA
0.6mA
800
700
IC -- VBE
VCE=2V
180
Collector Current, IC -- mA
Collector Current, IC -- mA
160
1.0mA
140
120
100
80
0.5mA
600
500
400
300
200
100
0.4mA
0.3mA
0.2mA
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1mA
IB=0
1.8
2.0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT05491
Collector-to-Emitter Voltage, VCE -- V
IT05490
Base-to-Emitter Voltage, VBE -- V
Ta=
75
°
C
25
°
C
--25
°
C
No.7508-2/6
ONSEMI [ ON SEMICONDUCTOR ]
