EE-SX67/47
EE-SX67/47
Application Example
Detection of Lead Frame Position
EE-SX670
Lead frame
Specifications
Ratings
Item
Output
NPN
Standard
L-shaped
T-shaped
Close-mounting
EE-SX670
EE-SX670A
EE-SX470
EE-SX671
EE-SX671A
EE-SX471
EE-SX672
EE-SX672A
EE-SX472
EE-SX673
EE-SX673A
EE-SX473
EE-SX674
EE-SX674A
EE-SX474
PNP
EE-SX670P
EE-SX670R
EE-SX470P
EE-SX671P
EE-SX671R
EE-SX471P
EE-SX672P
EE-SX672R
EE-SX472P
EE-SX673P
EE-SX673R
EE-SX473P
EE-SX674P
EE-SX674R
EE-SX474P
Sensing distance
5 mm (slot width)
Standard sensing object
Differential travel
Opaque: 2
0.025 mm
× 0.8 mm min.
Light source
GaAs infrared LED (940 nm)
(peak wave length)
Receiver
Si phototransistor with a sensing wavelength of 850 nm max.
Operation indicator (red) lit with incident (Models with a suffix of “A” or “R” have Dark-ON indicators.)
5 to 24 VDC 10%, ripple (p-p): 10% max.
Operation indicator (see note 1)
Power supply voltage
Current consumption
Control output
±
35 mA max. (NPN), 30 mA max. (PNP)
NPN open collector output models:
At 5 to 24 VDC: 100-mA load current (I ) with a residual voltage of 0.8 V max.
C
40-mA load current (I ) with a residual voltage of 0.4 V max.
C
PNP open collector output models:
At 5 to 24 VDC: 50-mA load current (I ) with a residual voltage of 1.3 V max.
C
Response frequency
(see note 2)
1 kHz max. (3 kHz average)
Note: 1. The indicator is GaP red LED (peak emission wavelength: 690 nm).
2. The response frequency was measured by detecting the following rotating disks.
Disk
2.1 mm
1 mm
1 mm
t = 0.2 mm
2