FEDD51V17405F-01
1
Semiconductor
MSM51V17405F
AC CHARACTERISTICS (1/3)
(VCC = 3.3V ± 0.3V, Ta = 0 to 70°C) Note1,2,3,12,13
MSM51V17405 MSM51V17405 MSM51V17405
F-50 F-60 F-70
Parameter
Symbol
Unit Note
Min.
84
Max. Max. Max.
Min.
104
135
25
Min.
124
160
30
Random Read or Write Cycle Time
Read Modify Write Cycle Time
Fast Page Mode Cycle Time
t
ns
ns
ns
RC
t
110
20
RWC
t
HPC
Fast Page Mode Read Modify Write
Cycle Time
t
58
68
78
ns
HPRWC
Access Time from RAS
t
50
13
25
30
13
60
15
30
35
15
70
20
35
40
20
ns 4, 5, 6
RAC
Access Time from CAS
t
ns
ns
ns
ns
4,5
4,6
4
CAC
Access Time from Column Address
Access Time from CAS Precharge
Access Time from OE
t
AA
t
t
CPA
4
OEA
Output Low Impedance Time from
CAS
t
0
5
0
0
5
0
0
5
0
ns
ns
ns
4
CLZ
Data Output Hold After CAS Low
t
DOH
CAS to Data Output Buffer Turn-
off Delay Time
t
13
13
13
13
15
15
15
15
20
20
20
20
7,8
7,8
7
CEZ
REZ
OEZ
RAS to Data Output Buffer Turn-
off Delay Time
t
0
0
0
0
0
0
ns
ns
ns
OE to Data Output Buffer Turn-off
Delay Time
t
WE to Data Output Buffer Turn-
off Delay Time
t
0
1
0
1
0
1
7
3
WEZ
Transition Time
t
50
32
50
32
50
32
ns
ms
ns
T
Refresh Period
t
REF
RAS Precharge Time
RAS Pulse Width
t
30
50
40
60
50
70
RP
t
10,000
10,000
10,000 ns
100,000 ns
RAS
RAS Pulse Width
(Fast Page Mode with EDO)
t
50
100,000
60
100,000
70
RASP
RAS Hold Time
t
7
7
10
10
13
13
ns
ns
RSH
RAS Hold Time referenced to OE
t
ROH
CAS Precharge Time
(Fast Page Mode with EDO)
t
7
10
10
ns
CP
CAS Pulse Width
CAS Hold Time
t
t
7
10,000
10
40
10,000
13
45
10,000 ns
ns
CAS
35
CSH
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