FEDD51V17405F-01
1
Semiconductor
MSM51V17405F
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIUM RATINGS
Parameter
Voltage VCC Supply relative to VSS
Short Circuit Output Current
Power Dissipation
Symbol
VT
Value
–0.5 to 4.6
50
Unit
V
IOS
mA
W
PD*
1
Operating Temperature
Storage Temperature
Topr
0 to 70
–55 to 150
°C
°C
Tstg
*: Ta = 25°C
RECOMMENDED OPERATING CONDITIONS
(Ta = 0 to 70°C)
Parameter
Symbol
VCC
VSS
Min.
3.0
0
Typ.
3.3
0
Max.
Unit
V
3.6
0
Power Supply Voltage
V
Input High Voltage
Input Low Voltage
VIH
2.0
− 0.3
VCC + 0.3
0.8
V
VIL
V
Notes: *1. The input voltage is V + 1.0V when the pulse width is less than 20ns (the pulse width is with respect
CC
to the point at which V is applied).
CC
*2. The input voltage is V − 1.0V when the pulse width is less than 20ns (the pulse width respect to the
SS
point at which V is applied).
SS
PIN CAPACITANCE
(Vcc = 3.3V ± 0.3V, Ta = 25°C, f = 1 MHz)
Parameter
Symbol
CIN1
Min.
—
Typ.
—
Min.
5
Unit
pF
Input Capacitance (A0 – A10)
Input Capacitance
CIN2
CI/O
—
—
—
—
7
7
pF
pF
(RAS, CAS, WE, OE)
Output Capacitance (DQ1 – DQ4)
4/17
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