¡ Semiconductor
ML63512A/63514A
DC Characteristics (continued)
(VDD = VDDI = 1.5 V, VSS = 0 V, Ta = –20 to +70°C unless otherwise specified)
Mea-
suring
Circuit
Parameter
Symbol
Condition
Min. Typ. Max. Unit
(Pin Name)
High-speed clock stop
VDD = 1.5 V
2.8
2.0
—
—
3.0
—
V
V
VDDH Voltage
VDDH
High-speed clock oscillation
(RC oscillation, RCRH = 100 kW)
High-speed clock stop
1.0
2.0
1.5
—
2.0
2.7
V
V
V
DDL Voltage
VDDL
VSTA
VHOLD
CG
High-speed clock oscillation
Crystal Oscillation Start
Voltage
Oscillation start time: within 5 seconds
1.2
0.9
5.0
—
—
—
—
—
V
V
Crystal Oscillation Hold
Voltage
—
—
—
—
—
External Crystal Oscillator
Capacitance
25.0 pF
Internal Crystal Oscillator
Capacitance
1
CD
20.0 25.0 30.0 pF
10.0 15.0 20.0 pF
8.0 12.0 16.0 pF
Internal Low-Speed RC
Oscillator Capacitance
Internal High-Speed RC
Oscillator Capacitance
Input Pin Capacitance
(P0.0 to P0.3)
CXT
COS
(P1.0 to P1.3)
—
—
—
5.0
pF
CIN
(P7.0 to P7.3)
(P9.0 to P9.3)
(PA.0 to PA.3)
14/29
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