¡ Semiconductor
ML63512A/63514A
ELECTRICAL CHARACTERISTICS
DC Characteristics
• When backup is used
(VDD = VDDI = 1.5 V, VSS = 0 V, Ta = –20 to +70°C unless otherwise specified)
Mea-
suring
Circuit
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Ta = 25°C
High-speed oscillation stop Ta = –20 to +50°C
4.8
—
—
5.3
5.3
5.3 15.0
5.8
9.0
CPU is in HALT state
Supply Current 1
IDD1
mA
mA
Level detector stop
Ta = –20 to +70°C
Ta = 25°C
12.0 13.0 14.0
—
—
CPU operating
High-speed oscillation stop Ta = –20 to +50°C
Level detector stop
13.0 16.0
13.0 24.0
Supply Current 2
Supply Current 3
IDD2
Ta = –20 to +70°C
CPU operating at low speed
1
High-speed oscillation stop
Level detector active
(for a soft duty of about 3ꢀ)
IDD3
—
—
10.0 35.0 mA
550.0 750.0 mA
CPU operating at high speed
High-speed RC oscillation
Supply Current 4
IDD4
RCRH = 100 kW
• When backup is not used
(VDD = VDDI = 3.0 V, VSS = 0 V, Ta = –20 to +70°C unless otherwise specified)
Mea-
suring
Circuit
Parameter
Symbol
Condition
Min. Typ. Max. Unit
Ta = 25°C
High-speed oscillation stop Ta = –20 to +50°C
2.1
—
—
5.0
—
—
2.4
2.4
2.4 10.0
6.0
6.0
6.0 15.0
2.7
7.0
CPU is in HALT state
Supply Current 1
IDD1
mA
mA
Level detector stop
Ta = –20 to +70°C
Ta = 25°C
7.0
9.0
CPU operating
High-speed oscillation stop Ta = –20 to +50°C
Level detector stop
Supply Current 2
Supply Current 3
IDD2
Ta = –20 to +70°C
CPU operating at low speed
High-speed oscillation stop
Level detector active
IDD3
—
6.0 25.0 mA
1
(for a soft duty of about 3ꢀ)
CPU operating at high speed
High-speed RC oscillation
Supply Current 4
Supply Current 5
IDD4
—
—
410.0 550.0 mA
850.0 1000.0 mA
RCRH = 100 kW
CPU operating at high speed
High-speed ceramic oscillation
(ceramic oscillation, 2 MHz)
IDD5
13/29