¡ Semiconductor
MSM81C55-5RS/GS/JS
AC CHARACTERISTICS
VCC = 4.5 V to 5.5 V, VCC = 4.75 V to 5.25 V,
Ta = –40 to +80°C
80C85AH 3MHz I/F 80C85AH 5MHz I/F
Ta = –40 to +70°C
Parameter
Symbol
Unit Remarks
Min.
50
Max.
—
Min.
37
Max.
—
Address/latch Setup Time
Latch/address Holt Time
Latch/read (write) Delay Time
Read/output Delay Time
tAL
tLA
tLC
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
30
100
—
—
—
30
40
—
—
tRD
tAD
tLL
170
400
—
—
140
330
—
Address/output Delay Time
Latch Width
—
—
100
0
70
Read/data Bus Floating Time
Read (write)/latch Delay Time
Read (write) Width
100
—
0
80
tRDF
tCL
20
20
—
250
150
0
—
200
100
25
—
tCC
Data In/write Setup Time
Write/data-in Hold Time
tDW
tWD
tRV
tWP
tPR
tRP
tSBF
tSS
—
—
—
—
Recovery Time
300
—
—
200
—
—
Write/port Output Delay Time
Port Input/read Setup Time
Read/port Input Hold Time
Strobe/buffer Full Delay Time
Strobe Width
400
—
300
—
70
50
Load capaci-
tance: 150 pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
50
—
10
—
—
300
—
—
400
—
200
—
150
—
Strobe/buffer Empty Delay Time
Strobe/interrupt-on Delay Time
Read/interrupt-off Delay Time
Port Input/strobe Setup Time
Strobe/port-input Hold Time
Strobe/buffer-empty Delay Time
Write/buffer-full Delay Time
Write/interrupt-off Delay Time
Time Output Delay Time Low
Time Output Delay Time High
Read/data Buse Enable Delay Time
Timer Cycle Time
tRBE
tSI
300
300
300
—
400
400
400
—
—
—
—
—
tRDI
tPSS
tPHS
tSBE
tWBF
tWI
50
20
120
—
100
—
—
—
400
400
400
400
400
—
300
300
300
300
300
—
—
—
—
—
—
—
tTL
—
10
—
10
tTH
tRDE
tCYC
tr, tf
t1
320
—
320
—
—
—
Timer Input Rise and Fall Times
Timer Input Low Level Time
Timer Input High Level Time
80
80
80
120
40
70
—
—
—
—
t2
WRITE to TIMER-IN
for writes which start counting
tWT
tTW
200
0
200
0
—
—
—
—
ns
ns
TIMER-IN to WRITE
for writes which start counting
Note: Timings are measured wth V = 0.8 V and V = 2.2 V for both input and output.
L
H
4/19