NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
R
V
BR
C
(I/O-GND)
C
(I/O-I/O)
C
sup
V
F
[1]
[2]
[3]
[4]
Parameter
reverse standoff voltage
reverse current
breakdown voltage
input/output to ground
capacitance
input/output to input/output
capacitance
supply pin to ground
capacitance
forward voltage
Conditions
Min
-
Typ
-
<1
-
1
0.6
16
0.7
Max
5.5
100
9
1.5
-
-
-
Unit
V
nA
V
pF
pF
pF
V
V
R
= 3 V
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
(I/O-I/O)
= 0 V
f = 1 MHz;
V
CC
= 0 V
-
6
-
-
-
-
Measured from pin 2, 3 and 4 to ground.
Measured from pin 4 to ground.
Measured from pin 2 and 3 to ground.
Measured from pin 2 to pin 3.
2.0
C
(I/O-GND)
(pF)
1.6
006aaa483
1.0
C
(I/O-I/O)
(pF)
0.8
006aaa484
1.2
0.6
0.8
0.4
0.4
0.2
0
0
1
2
3
5
V
(I/O-GND)
(V)
4
0
0
1
2
3
4
5
V
(I/O-I/O)
(V)
f = 1 MHz; T
amb
= 25
°C
f = 1 MHz; T
amb
= 25
°C
Fig 2. Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3. Input/output to input/output capacitance as a
function of input/output to input/output voltage;
typical values
PRTR5V0U2X_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
4 of 11
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