NXP Semiconductors
PMBT3904M
40 V, 200 mA NPN switching transistor
Table 7.
Characteristics
…continued
T
amb
= 25
°
C unless otherwise specified.
Symbol
C
e
f
T
NF
Parameter
emitter capacitance
transition frequency
noise figure
Conditions
V
EB
= 500 mV;
I
C
= i
c
= 0 A; f = 1 MHz
V
CE
= 20 V; I
C
= 10 mA;
f = 100 MHz
V
CE
= 5 V; I
C
= 100
µA;
R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
Min
-
300
-
Typ
-
-
-
Max
8
-
5
Unit
pF
MHz
dB
600
h
FE
006aab115
0.20
I
B
(mA) = 5.0
I
C
(A)
0.15
4.0
3.0
2.0
1.0
006aab116
4.5
3.5
2.5
1.5
400
(1)
0.10
0.5
200
(2)
0.05
(3)
0
10
−1
1
10
10
2
I
C
(mA)
10
3
0.0
0
2
4
6
8
10
V
CE
(V)
V
CE
= 1 V
(1) T
amb
= 150
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−55 °C
T
amb
= 25
°C
Fig 3.
DC current gain as a function of collector
current; typical values
Fig 4.
Collector current as a function of
collector-emitter voltage; typical values
PMBT3904M_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 21 July 2009
5 of 11
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