NXP Semiconductors
PMBT3904M
40 V, 200 mA NPN switching transistor
10
3
duty cycle =
Z
th(j-a)
(K/W)
10
2
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
10
0.01
0
006aab603
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
I
EBO
h
FE
Parameter
Conditions
Min
-
-
Typ
-
-
Max
50
50
Unit
nA
nA
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
emitter-base cut-off
current
DC current gain
V
EB
= 6 V; I
C
= 0 A
V
CE
= 1 V
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
t
d
t
r
t
on
t
s
t
f
t
off
C
c
PMBT3904M_1
60
80
100
60
30
-
-
650
-
-
-
-
-
-
-
-
180
180
180
105
50
75
120
750
850
-
-
-
-
-
-
-
-
-
300
-
-
200
300
850
950
35
35
70
200
50
250
4
mV
mV
mV
mV
ns
ns
ns
ns
ns
ns
pF
collector-emitter
saturation voltage
base-emitter
saturation voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
V
CC
= 3 V; I
C
= 10 mA;
I
Bon
= 1 mA;
I
Boff
=
−1
mA
collector capacitance V
CB
= 5 V; I
E
= i
e
= 0 A;
f = 1 MHz
Rev. 01 — 21 July 2009
© NXP B.V. 2009. All rights reserved.
Product data sheet
4 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
