NXP Semiconductors
PESD1CAN
CAN bus ESD protection diode
6. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
RM
V
BR
C
d
∆C
d
/C
d
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
diode capacitance
matching
V
RWM
= 24 V
I
R
= 5 mA
f = 1 MHz; V
R
= 0 V
Parameter
Conditions
Min
-
-
25.4
-
-
-
Typ
-
<1
27.8
11
0.1
0.1
-
-
-
Max
24
50
30.3
17
-
-
40
70
300
Unit
V
nA
V
pF
%
%
V
V
Ω
f = 1 MHz; V
R
= 0 V
f = 1 MHz; V
R
= 2.5 V
V
CL
clamping voltage
I
PP
= 1 A
I
PP
= 3 A
-
-
-
r
dif
[1]
[2]
[3]
differential resistance
I
R
= 1 mA
∆C
d
is the difference of the capacitance measured between pin 1 and pin 3 and the capacitance measured
between pin 2 and pin 3.
Non-repetitive current pulse 8/20
µs
exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
PESD1CAN_4
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 04 — 15 February 2008
4 of 12
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