PBSS2515E
15 V, 0.5 A NPN low V
CEsat
(BISS) transistor
Rev. 02 — 21 April 2009
Product data sheet
1. Product profile
1.1 General description
NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in an ultra small
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515E.
1.2 Features
I
I
I
I
I
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
I
I
I
I
I
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse;
t
p
≤
1 ms
I
C
= 500 mA;
I
B
= 50 mA
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
300
Max
15
0.5
1
500
Unit
V
A
A
mΩ
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
PHILIPS [ NXP SEMICONDUCTORS ]
