NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
PNP complement: PMBT2907A.
MARKING
TYPE NUMBER
MMBT2222A
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
MMBT2222A
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
7C*
Top view
handbook, halfpage
MMBT2222A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
75
40
6
600
800
200
250
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
2004 Jan 16
2
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