MAC97A8; MAC97A6
Philips Semiconductors
Logic level triac
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
IGT gate trigger current
Parameter
Conditions
Min
Typ
Max
Unit
VD = 12 V; IT = 0.1 A; Figure 8
T2+ G+
−
−
−
−
1
2
2
4
5
5
5
7
mA
mA
mA
mA
T2+ G−
T2− G−
T2− G+
IL
latching current
VD = 12 V; IGT = 0.1 A; Figure 9
T2+ G+
−
1
10
10
10
10
10
1.9
2
mA
mA
mA
mA
mA
V
T2+ G−
−
5
T2− G−
−
1
T2− G+
−
2
IH
holding current
VD = 12 V; IGT = 0.1 A; Figure 10
IT = 0.85 A; Figure 11
VD = 12 V; IT = 0.1 A; Figure 7
VD = VDRM; IT = 0.1 A; Tj = 110 °C
VD = VDRM (max); Tj = 110 °C
−
1
VT
VGT
on-state voltage
gate trigger voltage
−
1.4
0.9
0.7
3
−
V
0.1
−
−
V
ID
off-state leakage current
100
µA
Dynamic characteristics
dVD/dt
critical rate of rise of
VD = 67% of VDM(max)
;
30
45
−
V/µs
off-state voltage
Tcase = 110 °C; exponential
waveform; gate open circuit;
Figure 12
dVcom/dt
critical rate of rise of
commutation voltage
VD = rated VDRM; Tcase = 50 °C;
ITM = 0.84 A;
commutating dI/dt = 0.3 A/ms
−
−
5
2
−
−
V/µs
µs
tgt
gate controlled turn-on
time
ITM = 1.0 A; VD = VDRM(max);
IG = 25 mA; dIG/dt = 5 A/µs
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 29 March 2001
4 of 12
NXP [ NXP ]
