MAC97A8; MAC97A6
Philips Semiconductors
Logic level triac
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDRM
repetitive peak off-state voltage
MAC97A8
Tj = 25 to 125 °C
−
−
−
−
600
400
0.6
8.0
V
V
A
A
MAC97A6
Tj = 25 to 125 °C
IT(RMS)
ITSM
on-state current (RMS value)
full sine wave; Tlead ≤ 50 °C; Figure 5
non-repetitive peak on-state current
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
Tj = 25 to 125 °C
−
−
−
600
400
0.6
V
V
A
Tj = 25 to 125 °C
IT(RMS)
ITSM
on-state current (RMS value)
full sine wave; Tlead ≤ 50 °C; Figure 5
non-repetitive peak on-state current
full sine wave; Tj = 25 °C prior to surge
t = 20 ms
−
−
−
8.0
A
t = 16.7 ms
8.8
A
A2s
I2t
I2t for fusing
t = 10 ms
0.32
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 1.0 A; IG = 0.2 A; dIG/dt = 0.2 A/µs
T2+ G+
−
−
−
−
−
50
50
50
10
1
A/µs
A/µs
A/µs
A/µs
A
T2+ G−
T2− G−
T2− G+
IGM
gate current (peak value)
gate voltage (peak value)
gate power (peak value)
average gate power
t = 2 µs max
t = 2 µs max
t = 2 µs max
Tcase = 80 °C; t = 2 µs max
VGM
PGM
PG(AV)
Tstg
Tj
5
V
−
5
W
−
0.1
+150
+125
W
storage temperature
−40
−40
°C
operating junction temperature
°C
9397 750 07917
© Philips Electronics N.V. 2001. All rights reserved.
Product specification
Rev. 01 — 29 March 2001
2 of 12
NXP [ NXP ]
