LPC546xx
NXP Semiconductors
32-bit ARM Cortex-M4 microcontroller
11. Dynamic characteristics
11.1 Flash memory
Table 22. Flash characteristics
Tamb = 40 C to +105 C, unless otherwise specified. VDD = 1.71 V to 3.6 V
Symbol Parameter
Nendu endurance
Conditions
Min
Typ
Max
Unit
[1]
sector erase/program
10000
1000
-
-
-
-
cycles
cycles
page erase/program; page
in a sector
tret
retention time powered
unpowered
10
10
-
-
-
-
-
years
years
ms
-
ter
erase time
page, sector, or multiple
consecutive sectors
100
[2]
tprog
programming
time
-
1
-
ms
[1] Number of erase/program cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash.
11.2 EEPROM
Table 23. EEPROM characteristics
Tamb = 40 C to +85 C; VDD = 1.71 V to 3.6 V.
Symbol
fclk
Parameter
Conditions
Min
Typ
Max
Unit
clock frequency
endurance
800
1500
1600
kHz
Nendu
tret
100000
20
-
-
-
-
cycles
years
retention time
Tamb = 40 C to
+85 C
ta
access time
read
-
-
100
-
-
ns
erase/program;
fclk = 1500 kHz
1.99
ms
erase/program;
fclk = 1600 kHz
-
1.87
-
ms
[1]
[1]
[1]
[1]
[1]
twait
wait time
read; RPHASE1
read; RPHASE2
write; PHASE1
write; PHASE2
write; PHASE3
70
35
20
40
10
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
[1] See the LPC546xx. user manual, UM10912 on how to program the wait states for the different read
(RPHASEx) and erase/program phases (PHASEx).
Remark: EEPROM is not accessible in deep-sleep and deep power-down modes
LPC546xx
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© NXP Semiconductors N.V. 2018. All rights reserved.
Product data sheet
Rev. 2.5 — 20 June 2018
102 of 169
NXP [ NXP ]
