Philips Semiconductors
Product data
Low power dual operational amplifiers
NE/SA/SE532/
LM258/358/A/2904
DC ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
V+ = +5 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
R
S
= 0
Ω
R
S
= 0
Ω;
over temp.
R
S
= 0
Ω;
over temp.
I
IN(+)
– I
IN(–)
Over temp.
Over temp.
I
IN(+)
or I
IN(–)
I
IN(+)
or I
IN(–)
; Over temp.
Over temp.
V+ = 30 V
V+ = 30 V; Over temp.
V+ = 30 V
R
L
≥
2 kΩ; V+ = 30 V; over temp.
R
L
≥
10 kΩ; V+ = 30 V; over temp.
R
L
≥
10 kΩ; over temp.
R
L
=
∞;
V+ = 30 V
I
CC
Supply current
R
L
=∞ on all amplifiers; V+ = 30 V;
over temp.
R
L
≥
2 kΩ; V
OUT
±10
V
A
VOL
Large-signal voltage gain
Supply voltage rejection
ratio
Amplifier-to-amplifier
coupling
4
V+=15V (for large V
O
swing);
over temp.
R
S
= 0
Ω
f = 1 kHz to 20 kHz (input referred)
V
IN+
= +1 V
DC
; V
IN–
= 0 V
DC
;
V+ = 15 V
DC
V
IN+
= +1 V
DC
; V
IN–
= 0 V
DC
;
V+ = 15 V
DC
; over temp.
V
IN–
= +1 V
DC
; V
IN+
= 0 V
DC
;
V+ = 15 V
DC
Output current (Sink)
V
IN–
= +1 V
DC
; V
IN+
= 0 V
DC
;
V+ = 15 V
DC
; over temp.
V
IN+
= 0 V; V
IN–
= +1 V
DC
;
V
O
= 200 mV
I
SC
GBW
SR
V
NOISE
Short circuit current
5
Differential input voltage
6
Unity gain bandwidth
Slew rate
Input noise voltage
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
f = 1 kHz
1
0.3
40
20
10
10
5
12
50
25
65
100
–120
40
20
20
8
50
40
60
V+
1
0.3
40
20
10
10
5
12
0
0
70
26
27
28
5
0.5
0.6
100
20
1.0
1.2
25
15
65
100
–120
40
20
20
8
50
40
60
V+
85
10
45
40
50
V+–1.5
V+–2.0
0
0
65
26
27
28
5
0.5
0.6
100
20
1.0
1.2
70
150
300
7
±3
±30
±100
10
45
40
50
V+–1.5
V+–2.0
250
500
SE532, LM258
Min
V
OS
V
OS
I
OS
I
OS
I
BIAS
S
I
B
V
C
CM
CMRR
V
O
OH
V
OL
Offset voltage
1
Drift
Offset current
Drift
Input current
2
Drift
Common-mode voltage
g
range
3
Common-mode rejection
ratio
Output voltage swing
Output voltage swing
Typ
±2
Max
±5
±7
7
±5
±50
±150
NE/SA532/
LM358/LM2904
Min
Typ
±2
Max
±7
±9
mV
mV
µV/°C
nA
nA
pA/°C
nA
nA
pA/°C
V
V
dB
V
V
mV
mA
mA
V/mV
V/mV
dB
dB
mA
mA
mA
mA
µA
mA
V
MHz
V/µs
nV/√Hz
UNIT
PSRR
Output current (Source)
I
OUT
(Notes on next page).
2002 Jul 12
4
PHILIPS [ NXP SEMICONDUCTORS ]
