NXP Semiconductors
HEF4104B
Quad low-to-high voltage translator with 3-state outputs
15
V
DD(B)
(V)
10
001aag265
operating area
5
0
0
5
10
V
DD(A)
(V)
15
The shaded area shows the permissible operating range.
Fig 4.
V
DD(B)
as a function of V
DD(A)
11. Dynamic characteristics
Table 7.
Dynamic characteristics
T
amb
= 25
°
C; for test circuit see
unless otherwise specified.
Symbol Parameter
t
PHL
HIGH to LOW
propagation delay
Conditions
An to Bn, Bn; see
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
t
PLH
LOW to HIGH
propagation delay
An to Bn, Bn; see
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
t
THL
HIGH to LOW output Bn or Bn; see
transition time
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
t
TLH
LOW to HIGH output Bn or Bn; see
transition time
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
t
PHZ
HIGH to OFF-state
propagation delay
OE to Bn, Bn; see
V
DD(A)
= V
DD(B)
= 5 V
V
DD(A)
= V
DD(B)
= 10 V
V
DD(A)
= V
DD(B)
= 15 V
-
-
-
70
55
60
135
110
120
ns
ns
ns
143 ns + (0.55 ns/pF)C
L
69 ns + (0.23 ns/pF)C
L
62 ns + (0.16 ns/pF)C
L
10 ns + (1.00 ns/pF)C
L
9 ns + (0.42 ns/pF)C
L
6 ns + (0.28 ns/pF)C
L
10 ns + (1.00 ns/pF)C
L
9 ns + (0.42 ns/pF)C
L
6 ns + (0.28 ns/pF)C
L
-
-
-
-
-
-
-
-
-
170
80
70
60
30
20
60
30
20
340
160
140
120
60
40
120
60
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
143 ns + (0.55 ns/pF)C
L
69 ns + (0.23 ns/pF)C
L
57 ns + (0.16 ns/pF)C
L
-
-
-
170
80
65
340
160
135
ns
ns
ns
Extrapolation formula
Min
Typ
Max
Unit
HEF4104B_7
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 07 — 16 December 2009
6 of 14
PHILIPS [ NXP SEMICONDUCTORS ]
