NXP Semiconductors
BSS84
P-channel enhancement mode vertical DMOS transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
Parameter
drain-source voltage
gate-source voltage
drain current
T
sp
= 25
°C;
V
GS
=
−10
V;
see
T
sp
= 100
°C;
V
GS
=
−10
V
I
DM
P
tot
T
stg
T
j
[1]
Conditions
25
°C ≤
T
j
≤
150
°C
Min
-
-
-
-
-
Max
−50
±20
−130
−75
−520
250
+150
+150
Unit
V
V
mA
mA
mA
mW
°C
°C
peak drain current
total power dissipation
storage temperature
junction temperature
T
sp
= 25
°C;
t
p
≤
10
µs;
see
T
sp
= 25
°C;
see
-
−65
−65
Device mounted on a Printed-Circuit Board (PCB).
−10
3
I
D
(mA)
−10
2
(1)
mld251
t
p
=
10
µs
100
µs
1 ms
10 ms
100 ms
−10
DC
−1
−1
−10
V
DS
(V)
−10
2
T
sp
= 25
°C
(1) R
DSon
limitation
Fig 1.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BSS84_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 16 December 2008
3 of 11
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