NXP Semiconductors
BC637; BCP55; BCX55
60 V, 1 A NPN medium power transistors
10
3
Z
th(j-a)
(K/W)
10
2
duty cycle =
006aaa816
1.0
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
10
1
10
−1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for collector 6 cm
2
Fig 9. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT89;
typical values
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
Conditions
V
CB
= 30 V; I
E
= 0 A
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
V
EB
= 5 V; I
C
= 0 A
V
CE
= 2 V
I
C
= 5 mA
I
C
= 150 mA
I
C
= 500 mA
DC current gain
h
FE
selection -10
h
FE
selection -16
V
CEsat
V
BE
C
c
f
T
[1]
Min
-
-
-
Typ
-
-
-
Max
100
10
100
Unit
nA
µA
nA
I
EBO
h
FE
63
63
40
63
100
-
-
-
-
-
-
-
6
180
-
250
-
160
250
500
1
-
-
mV
V
pF
MHz
V
CE
= 2 V
I
C
= 150 mA
I
C
= 150 mA
I
C
= 500 mA; I
B
= 50 mA
V
CE
= 2 V; I
C
= 500 mA
V
CB
= 10 V; I
E
= i
e
= 0 A;
f = 1 MHz
V
CE
= 5 V; I
C
= 50 mA;
f = 100 MHz
collector-emitter
saturation voltage
base-emitter voltage
collector capacitance
transition frequency
-
-
-
100
Pulse test: t
p
≤
300
µs; δ
= 0.02.
BC637_BCP55_BCX55_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 25 June 2007
9 of 15
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