NXP Semiconductors
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
BC640
BCP53
BCX53
single pulse;
t
p
≤
1 ms
single pulse;
t
p
≤
1 ms
T
amb
≤
25
°C
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
−100
−80
−5
−1
−1.5
−0.2
Unit
V
V
V
A
A
A
-
-
-
-
-
-
-
−65
−65
0.83
0.65
1
0.5
0.9
1.3
150
+150
+150
W
W
W
W
W
W
°C
°C
°C
T
j
T
amb
T
stg
[1]
[2]
[3]
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
BC640_BCP53_BCX53_8
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 08 — 22 February 2008
4 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
