NXP Semiconductors
BC847/BC547 series
45 V, 100 mA NPN general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
Conditions
Min
-
-
-
Typ
-
-
-
Max
15
5
100
Unit
nA
µA
nA
collector-base cut-off V
CB
= 30 V; I
E
= 0 A
current
V
CB
= 30 V; I
E
= 0 A;
T
j
= 150
°C
emitter-base cut-off
current
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
DC current gain
h
FE
group A
h
FE
group B
h
FE
group C
V
CEsat
V
BEsat
V
BE
C
c
C
e
f
T
NF
collector-emitter
saturation voltage
base-emitter
saturation voltage
V
CE
= 5 V; I
C
= 10
µA
V
CE
= 5 V; I
C
= 10
µA
V
CE
= 5 V; I
C
= 10
µA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
V
CE
= 5 V; I
C
= 2 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 10 mA; V
CE
= 5 V
collector capacitance I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
emitter capacitance
transition frequency
noise figure
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
I
EBO
h
FE
V
EB
= 5 V; I
C
= 0 A
-
-
-
110
110
200
420
-
-
-
-
580
-
-
-
100
-
90
150
270
-
180
290
520
90
200
700
900
660
-
-
11
-
2
-
-
-
800
220
450
800
200
400
-
-
700
770
1.5
-
-
10
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
base-emitter voltage I
C
= 2 mA; V
CE
= 5 V
[1]
[2]
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
6 of 15
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