NXP Semiconductors
BAV102; BAV103
Single general-purpose switching diodes
600
I
F
(mA)
mbg459
10
2
I
FSM
(A)
10
mbg703
400
(1)
(2)
(3)
200
1
0
0
1
V
F
(V)
2
10
−1
1
10
10
2
10
3
t
p
(µs)
10
4
(1) T
amb
= 150
°C;
typical values
(2) T
amb
= 25
°C;
typical values
(3) T
amb
= 25
°C;
maximum values
Based on square wave currents.
T
j
= 25
°C;
prior to surge
Fig 1. Forward current as a function of forward
voltage
mgd009
Fig 2. Non-repetitive peak forward current as a
function of pulse duration; maximum values
mgd005
10
3
I
R
(µA)
10
2
1.6
C
d
(pF)
1.4
10
1.2
1
1.0
10
−1
10
−2
0
100
T
j
(°C)
200
0.8
0
10
V
R
(V)
20
V
R
= V
Rmax
Solid line: maximum values
Dotted line: typical values
f = 1 MHz; T
amb
= 25
°C
Fig 3. Reverse current as a function of junction
temperature
Fig 4. Diode capacitance as a function of reverse
voltage; typical values
BAV102_BAV103_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 16 August 2007
4 of 10
PHILIPS [ NXP SEMICONDUCTORS ]
