Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate--Source Leakage Current
(V = 5 Vdc, V = 0 Vdc)
I
1
GS
DS
Stage 2 — On Characteristics
Gate Threshold Voltage
V
V
1.2
—
7
2
2.7
8
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 150 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 300 mAdc)
DS
DQ2
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 300 mAdc, Measured in Functional Test)
V
12.5
1.2
DD
DQ2
Drain--Source On--Voltage
(V = 10 Vdc, I = 1 Adc)
V
0.2
0.39
GS
D
(1)
Stage 2 — Dynamic Characteristics
Output Capacitance
C
oss
—
205
—
pF
(V = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
Functional Tests (In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA, I
= 300 mA,
DQ2
DD
DQ1
P
out
= 2 W Avg., f = 2167.5 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
G
29
11
—
—
31
13
34
—
dB
%
ps
Power Added Efficiency
Adjacent Channel Power Ratio
Input Return Loss
PAE
ACPR
IRL
-- 5 0
-- 1 4
-- 4 7
-- 1 2
dBc
dB
Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 80 mA, I
= 300 mA, 2110--2170 MHz
DQ2
DD
DQ1
P
@ 1 dB Compression Point, CW
P1dB
IMD
—
20
—
W
out
IMD Symmetry @ 18 W PEP, P where IMD Third Order
MHz
out
sym
—
—
40
—
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
VBW
70
—
MHz
res
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 60 MHz Bandwidth @ P = 2 W Avg.
G
—
—
0.6
1.2
—
—
dB
out
F
Average Deviation from Linear Phase in 60 MHz Bandwidth
Φ
°
@ P = 20 W CW
out
Average Group Delay @ P = 20 W CW, f = 2140 MHz
Delay
—
—
2.5
15
—
—
ns
out
Part--to--Part Insertion Phase Variation @ P = 20 W CW,
∆Φ
°
out
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
—
0.036
0.003
—
—
dB/°C
dB/°C
Output Power Variation over Temperature
∆P1dB
(--30°C to +85°C)
1. Part internally matched both on input and output.
MW7IC2220NR1 MW7IC2220GNR1 MW7IC2220NBR1
RF Device Data
Freescale Semiconductor
3
NXP [ NXP ]
